2010. 12. 20 1/2 semiconductor technical data kf3n60p/f n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballas t and switching mode power supplies. features h v dss = 600v, i d = 3a h drain-source on resistance : r ds(on) =3.3 ? @v gs = 10v h qg(typ) = 8.5nc maximum rating (ta=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit kf3n60p KF3N60F drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 3 3* a @t c =100 ? 1.9 1.9* pulsed (note1) i dp 7 7* single pulsed avalanche energy (note 2) e as 120 mj repetitive avalanche energy (note 1) e ar 3.2 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 73 31 w derate above 25 ? 0.58 0.25 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.7 4 ? /w thermal resistance, junction-to- ambient r thja 62.5 62.5 ? /w g d s pin connection dim millimeters to-220ab 1.46 a bc d e f gh j k m no 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.050.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate2. drain 3. source 12 3 kf3n60p to-220is (1) a a b b c c d d e e f f g g h h 1.47 max1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. gate2. drain 3. source * single gauge lead frame KF3N60F (kf3n60p, KF3N60F) downloaded from: http:///
2010. 12. 20 2/2 kf3n60p/f revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.61 - v/ ? drain cut-off current i dss v ds =600v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =1.5a - 2.8 3.3 ? dynamic total gate charge q g v ds =480v, i d =3a v gs =10v (note4,5) - 8.5 - nc gate-source charge q gs - 1.8 - gate-drain charge q gd - 3.6 - turn-on delay time t d(on) v dd =300v i d =3a r g =25 ? (note4,5) - 25 - ns turn-on rise time t r - 25 - turn-off delay time t d(off) - 40 - turn-off fall time t f - 20 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 355 - pf output capacitance c oss - 45 - reverse transfer capacitance c rss - 4.4 - source-drain diode ratings continuous source current i s v gs 2010. 12. 20 37 k3n60p/f revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 10 0 10 -1 10 -2 10 1 68 41 0 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.21.1 1.0 05 0 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 6.02.0 0 1.0 3.0 5.04.0 04 26 3 15 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.02.5 1.0 1.5 2.0 c v gs =10v i ds = 1.5a v gs = 0v i ds = 250 25 c 11 0 0 0.1 10 v gs =10v v gs =7v v gs =10v v gs =6v v ds =30v 25 c t c =100 c t c =100 c v gs =5v downloaded from: http:///
2010. 12. 20 47 k3n60p/f revision no : 0 drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 drain current i d (a) drain - source voltage v ds (v) fig10. safe operation area 0 0 1.50.5 1.0 3.0 3.52.5 2.0 75 150 125 50 100 25 drain current i d (a) (kf3n60p) c junction temperature t j ( ) fig11. i d - t j t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 10 s 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 t c = 25 t j = 150 single pulse c c dc 10ms 1ms (KF3N60F) 100 s gate - charge q g (nc) 0 1210 62 4 8 14 16 6 2 10 8 12 4 0 fig8. q g - v gs gate - source voltage v gs (v) i d =3a fig 7. c - v ds capacitance (pf) v ds = 480v 10 s drain - source voltage v ds (v) 1 10 100 10000 05 1 5 2 5 3 5 10 20 30 40 c rss c oss c iss operation in this area is limited by r ds(on) operation in this area is limited by r ds(on) downloaded from: http:///
2010. 12. 20 57 k3n60p/f revision no : 0 time (sec) fig12. transient thermal response curve transient thermal resistance time (sec) fig13. transient thermal response curve transient thermal resistance (KF3N60F) - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pul se duty= 0.5 0.0 2 0.05 0.1 0.2 0.01 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -5 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 -1 10 0 10 -2 10 -1 10 -1 10 0 10 1 10 -4 (kf3n60p) - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pulse duty=0.5 0 .02 0.05 0.1 0.2 0.01 downloaded from: http:///
2010. 12. 20 67 k3n60p/f revision no : 0 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2010. 12. 20 77 k3n60p/f revision no : 0 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
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